Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
p.673
p.673
Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN
p.677
p.677
Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC
p.681
p.681
Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
p.685
p.685
The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
p.689
p.689
Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
p.693
p.693
Diffusion-Welded Al Contacts to p-Type SiC
p.697
p.697
Thermal Etching of 6H-SiC (11-20) Substrate Surface
p.701
p.701
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
p.705
p.705
The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
Abstract:
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Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
689-692
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Online since:
September 2003
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© 2003 Trans Tech Publications Ltd. All Rights Reserved