Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation
p.65
p.65
Optimized Parameters for Modeling Oxygen Nucleation in Silicon
p.71
p.71
Oxygen Ion Bombardment for Local Oxide Formation in Si
p.77
p.77
Nitrogen Diffusion and Interaction with Oxygen in Si
p.83
p.83
Structure and Electronic Properties of Nitrogen Defects in Silicon
p.93
p.93
Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics
p.99
p.99
Processing and Characterization of 300 mm Argon-Annealed Wafers
p.105
p.105
Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon
p.111
p.111
Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors
p.117
p.117
Structure and Electronic Properties of Nitrogen Defects in Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 95-96)
Pages:
93-98
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Online since:
September 2003
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© 2004 Trans Tech Publications Ltd. All Rights Reserved
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