Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications

Alessia Le Donne; Simona Binetti; Giovanni Isella; Bernard Pichaud; Michael Texier; Maurizio Acciarri; Sergio Pizzini

doi:10.4028/www.scientific.net/SSP.131-133.33

Paper Titles

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon
p.9

Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells
p.15

Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature
p.21

Mechanism of Shunting of Nanocrystalline Silicon Solar Cells Deposited on Rough Ag/ZnO Substrates
p.27

Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications
p.33

Origination and Properties of Dislocations in Thin Film Nitrides
p.39

Metal In-Diffusion during Fe and Co-Germanidation of Germanium
p.47

Investigation of 4H-SiC Layers Implanted by Al Ions
p.53

Interstitial Carbon-Related Defects in Si_1-xGe_x Alloys
p.59

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Advances in Structural Characterization of Thin...

Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications

Abstract:

The knowledge and control of the structural and morphological properties of nanocrystalline silicon is a fundamental requisite for its proper application in photovoltaics. To this purpose, nanocrystalline silicon films grown by Low Energy Plasma Enhanced Chemical Vapour Deposition (LEPECVD) technique on different kinds of substrates were submitted to a systematic characterization using Raman spectroscopy, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The results showed that the nature of the film substrate induces deep changes in the structural properties of the deposited films. The importance of a Raman in–depth analysis for an accurate determination of the sample structure has been also demonstrated.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

33-38

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.33

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Online since:

October 2007

Authors:

Alessia Le Donne, Simona Binetti, Giovanni Isella, Bernard Pichaud, Michael Texier, Maurizio Acciarri, Sergio Pizzini

Keywords:

Glassy and Crystalline Substrates, High Resolution Transmission Electron Microscopy, Nanocrystalline Silicon, RAMAN, Structural Property, X-Ray Diffraction (XRD)

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References

[1] K. Bruhne, M.B. Schubert, C. Kuhler, J.H. Werner, Thin Solid Films 395 (2001) 163.

Google Scholar

[2] J. Meier, R. Flückiger, H. Keppner, A. Shah, Appl. Phys. Lett. 65 (1994) 860.

Google Scholar

[3] Shah, J. Meier, E. Vallat-Sauvin, C. Droz, U. Kroll, N. Wyrsch, J. Guillet, U. Graf, Thin. Solid Films 403-404(2002) 179.

DOI: 10.1016/s0040-6090(01)01658-3

Google Scholar

[4] P. Alpuim,V. Chu J.P. Konde, J. Appl. Phys. 86(1999) 3812.

Google Scholar

[5] M. Kondo, M. Fukava, L. Guo, A. Matsuda J. Non-Cryst. Solids, 266-269 (2000) 84.

Google Scholar

[6] S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel, S. Pizzini , Thin Solid Films 487 (2005) 19.

DOI: 10.1016/j.tsf.2005.01.028

Google Scholar

[7] B. Garrido, A. Perez-Rodriguez, J.R. Morante, A. Achiq, F. Gourbilleau, R. Madelon, R. Rizk, J. Vac. Sci. Techn. B 16 (1998) 1851.

Google Scholar

[8] C. Rosenblad, H.R. Deller, A. Dommann, T. Meyer, P. Schroeter, H. von Känel, J Vac Sic Technol A 16 (1998) 2785.

Google Scholar

[9] C. Smit, R. van Swaaij, H. Donker, A. Petit, W. Kessels, M. van de Sanden, J. Appl. Phys. 94 (2003) 3582.

Google Scholar

[10] S. Veprek, F-A Sarott F-A, Z. Iqbal, Phys. Rev. B 36 (1987) 3344.

Google Scholar

[11] Z.X. Zhao, R.Q. Cui, F.Y. Meng, Z.B. Zhou, H.C. Yu, T.T. Sun, Solar Energy Materials & Solar Cells 86 (2005) 135.

Google Scholar

[12] T. Sugano, T. Kitagawa, Y. Sobajima, T. Toyama, H. Okamoto, J. Appl. Phys. 87 (2005) 94910.

Google Scholar

[13] S. Pizzini, M. Acciarri, S. Binetti, D. Cavalcoli, A. Cavallini, D. Chrastina, L. Colombo, E. Grilli, G. Isella, M. Lancin, A. Le Donne, A. Mattoni, K. Peter, B. Pichaud, E. Poliani, M. Rossi, S. Sanguinetti, M. Texier, H. von Känel, Materials Science and Engineering B 134 (2006).

DOI: 10.1016/j.mseb.2006.06.038

Google Scholar

[14] E. Vallat-Sauvain, U. Kroll, J. Meier, A. Shah, J. Pohl, J. Appl. Phys. 87 (2000) 3137.

Google Scholar

[15] Matsuda, K. Kumagai, K. Tanaka, Jpn. J. Appl. Phys., Part 2 22 (1982) L34.

Google Scholar