Paper Titles
Isotope Effects on Hydrogen-Related Bound Exciton Spectra in SiC
p.641
On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
p.645
Temperature-Dependence of Zone-Center Phonon Modes in 4H-SiC
p.649
Brillouin Scattering Studies of Surface Acoustic Waves in SiC
p.653
Optical Investigation of the Built-In Strain in 3C-SiC Epilayers
p.657
Specificity of Electron Impact Ionization in Superstructure Silicon Carbide
p.661
Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC
p.665
Electrical Characterization of Semi-Insulating 6H-SiC Substrates
p.669
Impact Ionization Coefficients of 4H-SiC
p.673

Optical Investigation of the Built-In Strain in 3C-SiC Epilayers

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

657-660

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.657

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Online since:

June 2004

Authors:

Augustinas Galeckas, Andrej Yu. Kuznetsov, Thierry Chassagne, Gabriel Ferro, Jan Linnros, Vytautas Grivickas

Keywords:

3C-SiC Heteroepitaxy, Photoluminescence (PL), Stress

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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