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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Theoretical Investigations of the Energy Levels of...

Theoretical Investigations of the Energy Levels of Defects in Germanium

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Abstract:

The donor and acceptor levels of defects in Ge as well as in Si are found using a local density functional method applied to large H-terminated defective clusters. The surfaces of the clusters are modified so that their band gaps are aligned with experimental values. It is shown that the resulting energies of the first donor and acceptor levels are within about 0.2 eV of the experimental values.

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Gettering and Defect Engineering in Semiconductor Technology XI

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

697-702

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.697

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Online since:

December 2005

Authors:

R. Jones, A. Carvalho, J. Coutinho, Vitor Torres, Sven Öberg, Patrick R. Briddon

Keywords:

Defect, DLTS, Energy Level, Germanium, Silicon, Theory

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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