Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

X.A. Mei; Min Chen; A.H. Cai; K.L. Su; Chong Qing Huang; Z.M. Wan

doi:10.4028/www.scientific.net/AMR.105-106.259

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 105-106Ferroelectric Properties and Microstructures of...

Ferroelectric Properties and Microstructures of Tb₄O₇-Doped Bi₄Ti₃O₁₂ Thin Films

Abstract:

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

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Advanced Materials Research (Volumes 105-106)

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259-262

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.105-106.259

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April 2010

Authors:

X.A. Mei, Min Chen, A.H. Cai, K.L. Su, Chong Qing Huang, Z.M. Wan

Keywords:

Bismuth Titanate, Ferroelectric

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