Two Dimensional Graphene/h-BCN Based Devices with Large Ion/Ioff Ratio for Digital Applications

Gianluca Fiori; Samantha Bruzzone; Giuseppe Iannaccone

doi:10.4028/www.scientific.net/AST.77.266

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In Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio in Silicon CMOS Compatible Processing
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Two Dimensional Graphene/h-BCN Based Devices with Large Ion/Ioff Ratio for Digital Applications
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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 77Two Dimensional Graphene/h-BCN Based Devices with...

Two Dimensional Graphene/h-BCN Based Devices with Large Ion/Ioff Ratio for Digital Applications

Abstract:

We present a performance assessment of graphene/hexagonal Boron Nitride heterojunctions based transistors able to provide large current modulation. The study is performed by means of a multi-scale approach leveraging ab-initio simulations to capture the physics at the atomic scale, and tight-binding simulations to compute transport. In particular, we focus on two technological solutions, a vertical and a planar structure both able to provide large Ion/Ioff ratios. As we will show, due to reduced capacitative coupling, the planar structure outperforms the vertical device as far as digital applications are concerned.

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Periodical:

Advances in Science and Technology (Volume 77)

Pages:

266-269

DOI:

https://doi.org/10.4028/www.scientific.net/AST.77.266

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Online since:

September 2012

Authors:

Gianluca Fiori, Samantha Bruzzone, Giuseppe Iannaccone

Keywords:

Current Modulation, Graphene Heterostructures, hBN, Modeling, NEGF

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References

[1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306 (2004) 666–669.

DOI: 10.1126/science.1102896

Google Scholar

[2] J. -H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotech. 3 (2008) 206–209.

Google Scholar

[3] G. Fiori, A. Betti, S. Bruzzone, and G. Iannaccone, ACS Nano 6 (2012) 2642– 2648.

Google Scholar

[4] L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko, Science 335 (2012) 947–950.

DOI: 10.1126/science.1218461

Google Scholar

[5] L. Ci et al., Nature Materials 9 (2010) 430.

Google Scholar

[6] The International Technology Roadmap for Semiconductors - 2011 Edition - Chapter 2: Pro- cess Integration, Devices, and Structures. Available at: http: /www. itrs. net.

Google Scholar

[7] Giannozzi, P.; Baroni, S.; Bonini, N.; Calandra, M.; Car, R.; Cavazzoni, C.; Ceresoli, D.; Chiarotti, G. L.; Cococcioni, M.; Dabo1, I.; et al., J. Phys.: Condens. Matter 21 (2009) 395502.

Google Scholar

[8] Available at: http: /www. nanohub. org/tools/vides. DOI: 10254/nanohub-r5116. 5 (Accessed July 8, 2009).

Google Scholar

[9] Smogunov, A.; corso, A. D.; Tosatti, E., Phys. Rev. B 70 (2004) 045417.

Google Scholar