Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic Circuit

Yoshiki Hamana; Takahide Oya

doi:10.4028/www.scientific.net/AST.95.32

Paper Titles

Research of Diamond-Like Carbon Film Deposited by Double Pulsed Lasers
p.11

Evolution of Cu Surface Morphology and its Effect on Graphene Synthesized by Chemical Vapor Deposition
p.17

Liquid Crystal Assisted Selective Separation of Large Graphene Oxide and its Size Dependent Oxygen Reduction Catalytic Effect
p.23

The Possibilities of Graphenes Application in Textronic Devices
p.27

Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic Circuit
p.32

Development of Carbon-Nanotube Composite Thread and its Application to "Thread Transistor"
p.38

Energy Gap Associated to Photocatalytic Activity of MWCNT/TiO₂/ZnO Nanocomposites
p.44

Carbon Coils-Polyurethane Composites for the Shielding Materials of Electromagnetic Interference
p.50

The Influence of the Exterior Surface on Grain Boundary Mobility Measurements
p.56

HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 95Improvement of Performance of Paper Transistor...

Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic Circuit

Abstract:

We propose development of an advanced type of "paper transistor" by using carbon-nanotube (CNT) composite papers (CNTCPs) and aim to apply our paper transistors to the construction of logic circuits. It is known that CNTs have many functions such as high electrical and thermal conductivities and metallic and semiconducting properties. Our CNTCP, which has various functions held by CNTs despite being paper, can be fabricated easily by scooping up and drying materials from a mixture of CNT and pulp (paper materials) dispersions. The CNTs have metallic or semiconducting properties, so metallic and semiconducting CNTCPs can be fabricated. By preparing such CNTCPs and normal paper as an insulator, we can produce the paper transistor. In previous work, we confirmed our prototype paper transistor could operate as a p-type transistor. However, the sample had problems, e.g., the internal resistance was rather high. In this study, we aim to overcome the problems by using a novel method for making the CNTCP. As the result of experiments, we succeeded in obtaining new paper transistors with better performance in comparison with the previous one. Moreover, we succeeded in finding a potential use as an n-type paper transistor by using an n-type doping material for semiconducting CNTCPs.