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HomeKey Engineering MaterialsKey Engineering Materials Vol. 470KFM Observation of Electron Charging and...

KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel

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Abstract:

Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an electric field. This capability is demonstrated for silicon-on-insulator field-effect-transistors (SOI-FETs) with a phosphorus-doped channel. We show results of the detection of individual dopants in Si by LT-KFM. Furthermore, we also observe single-electron charging in individual dopants located in the Si channel region.

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Periodical:

Key Engineering Materials (Volume 470)

Pages:

33-38

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.470.33

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Cite this paper

Online since:

February 2011

Authors:

Miftahul Anwar, Daniel Moraru, Yuya Kawai, Maciej Ligowski, Takeshi Mizuno, Ryszard Jabłoński, Michiharu Tabe

Keywords:

LT KFM, Single Dopant, Single-Electron Charging

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Сopyright:

© 2011 Trans Tech Publications Ltd. All Rights Reserved

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