Effect of Nitridation on Indium-Composition of InGaN Films

Jung Hun Choi; P.Suresh Kumar; Shi Yang Ji; Shojiki Kanako; Takashi Hanada; Ryuji Katayama; Takashi Matsuoka

doi:10.4028/www.scientific.net/KEM.508.193

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 508Effect of Nitridation on Indium-Composition of...

Effect of Nitridation on Indium-Composition of InGaN Films

Abstract:

The Present Study Aims to Understand the Relation between the Nitridation and Indium-Composition of Ingan Grown on Sapphire Substrate Using the Metalorganic Vapor Phase Epitaxy through X-Ray Diffraction Reciprocal Space Mapping Measurements. In-Composition of InGaN on Nitrided Sapphire Substrate Increased to 13% which Is Higher than the Sample without Nitridation with 7%. Also, Flat Surface Was Observed in the Nitrided Sample. Two Times Larger in-Plane Strain Was Induced at the Nitired Sample. Ingan Grown on Low-Temperature Gan Buffer, however, Did Not Show Clear Effect of Nitridation. The Two Investigated Samples Showed Similar Indium Composition, Surface Flatness, and in-Plane Strain with and without Nitridation. Differences of Indium Incorporation and Relaxation of in-Plane Strain Were Attributed to the Effect of AIN Formed by Nitridation Process.

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Key Engineering Materials (Volume 508)

Pages:

193-198

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.508.193

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Online since:

March 2012

Authors:

Jung Hun Choi, P.Suresh Kumar, Shi Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

Keywords:

In-Composition, InGaN, Nitridation, Reciprocal Space Mapping (RSM)

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