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HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Charge Carrier Lifetime Modificaiton in Silicon by...

Charge Carrier Lifetime Modificaiton in Silicon by High Energy H⁺, He⁺ Ion Implantation

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Materials Science Applications of Ion Beam Techniques

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Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

101-106

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.101

Citation:

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Online since:

May 1997

Authors:

N.Q. Khánh, P. Tüttö, E.N. Jároli, O. Buiu, L.P. Biró, F. Pászti, T. Mohácsy, C. Kovacsics, A. Manuaba, J. Gyulai

Keywords:

Charge Carrier Lifetime, Excess Charge Pocket, Ion Implantation, Lifetime Tailoring, Microwave Photoconductive Decay (μ-PCD), Radiation Damage, Recombination Activity

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