Electron Paramagnetic Resonance Studies of Defects in Indium-Doped Silicon
p.445
p.445
Infrared Absorption Studies of the Divacancy in Silicon-New Properties of and Interpretation of the 0.34 eV Peak
p.451
p.451
Physical Behaviour of 4d Transition Metal Impurity in Silicon
p.457
p.457
Level Splitting of the Cd-Ground State in Silicon
p.463
p.463
Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS)
p.469
p.469
Metastable Thermal Donor States in Germanium Identified by Far-IR Spectroscopy
p.473
p.473
A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon
p.481
p.481
The Bistability of Thermal Donors in Silicon Investigated by Infrared Spectroscopy
p.487
p.487
Pressure Studies of 'Resonant' Metastable Localized Electron State in Heavilly Doped O-GaAs
p.493
p.493
Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS)
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
469-472
Citation:
Online since:
January 1989
Authors:
Price:
Permissions: