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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Non-Contact Doping Profiling in Epitaxial SiC

Non-Contact Doping Profiling in Epitaxial SiC

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

755-758

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.755

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Online since:

June 2004

Authors:

A. Savtchouk, E. Oborina, A.M. Hoff, J. Lagowski

Keywords:

Doping, Non-Contact Measurement, Silicon Carbide (SiC)

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[2] Yu. Goldberg et al, in Properties of Advanced Semiconductor Materials, Ed. M. Levinshtein, S.L. Rumyanstev and M.S. Shur, J. Wiley and Sons, Inc., (2001), p.94.

[3] D.K. Schroder: Semiconductor Material and Device Characterization, 2nd ed, J. Wiley & Sons, (1998), p.278.