Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining

Takehiro Kato; Yasuhisa Sano; Hideyuki Hara; Hidekazu Mimura; Kazuya Yamamura; Kazuto Yamauchi

doi:10.4028/www.scientific.net/MSF.600-603.843

Paper Titles

The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes
p.827

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)
p.831

Damage-Free Planarization of 2-Inch 4H-SiC Wafer Using Pt Catalyst Plate and HF Solution
p.835

The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries
p.839

Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining
p.843

Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide
p.847

Electric Discharge Machining for Silicon Carbide and Related Materials
p.851

Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal
p.855

A Silicon Carbide Accelerometer for Extreme Environment Applications
p.859

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Beveling of Silicon Carbide Wafer by Plasma...

Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining

Abstract:

Beveling is essential for preventing the chipping of the edge of a wafer during surface polishing and other processes. Plasma chemical vaporization machining (PCVM) is an atmospheric-pressure plasma etching process. It has a high removal rate equivalent to those of conventional machining methods such as grinding and lapping, which are used for high-hardness materials such as silicon carbide, due to the generation of high-density radicals in atmospheric-pressure plasma. Furthermore, PCVM does not damage the wafer surface because it is a purely chemical process; therefore, it is considered that PCVM can be used as an effective method of beveling the edge of SiC wafers. In this paper, we report the investigation of the beveling of SiC wafers by PCVM.