New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4He Ion Irradiated 4H SiC

Fei Yan; Robert P. Devaty; Wolfgang J. Choyke; Tsunenobu Kimoto; Takeshi Ohshima; Gerhard Pensl; Adam Gali

doi:10.4028/www.scientific.net/MSF.645-648.411

Paper Titles

Theory of Neutral Divacancy in SiC: A Defect for Spintronics
p.395

The Carbon Vacancy Related EI4 Defect in 4H-SiC
p.399

Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
p.403

The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation
p.407

New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC
p.411

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
p.415

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
p.419

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
p.423

Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers
p.427

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648New Lines and Issues Associated with Deep Defect...

New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC

Abstract:

In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm-2 electron beams in an electron microscope and now produced by low dose 1015 cm-2 electron, 5x1010 cm-2 proton and helium ion irradiation. New no phonon lines E0, F0, θ0, Φ0, K0, G0, J0, M0 and phonon replicas are found. Phonon replicas up to the fifth harmonic are well accounted for by theory giving convincing new evidence that the di-carbon antisite is responsible for these deep defect lines.