Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication
p.500
p.500
Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
p.504
p.504
β-SiC NWs Grown on Patterned and MEMS Silicon Substrates
p.508
p.508
Growth of SiC Microwires through Si Microwires Carburization
p.512
p.512
Time-Dependent Density Functional Calculations on Hydrogenated Silicon Carbide Nanocrystals
p.516
p.516
Influence of Oxygen on the Absorption of Silicon Carbide Nanoparticles
p.520
p.520
Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions
p.524
p.524
An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA
p.531
p.531
Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
p.535
p.535
Time-Dependent Density Functional Calculations on Hydrogenated Silicon Carbide Nanocrystals
Abstract:
The electronic structure and absorption spectrum of hydrogenated silicon carbide nanocrystals (SiC NC) have been determined by first principles calculations. We show that the reconstructed surface can significantly change not just the onset of absorption but the shape of the spectrum at higher energies. We compare our results with two recent experiments on ultrasmall SiC NCs.
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Info:
Periodical:
Materials Science Forum (Volumes 679-680)
Pages:
516-519
Citation:
Online since:
March 2011
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