4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments

Abstract:

4H-SiC Schottky Barrier Diodes (SBDs) with remarkable electrical performance have been fabricated and characterised. A barrier height about 1.64V and an ideality factor close to 1 are extracted from the forward characteristics measured at several temperatures. These essential Schottky contact parameters are observed to be constant with temperature. A temperature probe with a simple and innovative scheme is designed and applied. The probe uses SiC SBDs as temperature sensor in the 20-4000C range, with measured sensitivities varying from 1.3 mV/K to 2.8 mV/K. The probe is meant to monitorize the temperature inside the furnaces, in the cement industry.

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DOI: 10.1109/smicnd.2009.5336658