Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC

Robert P. Devaty; Fei Yan; Wolfgang J. Choyke; Adam Gali; Tsunenobu Kimoto; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.717-720.263

Paper Titles

On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps
p.247

Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?
p.251

Excitation Properties of Silicon Vacancy in Silicon Carbide
p.255

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy
p.259

Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
p.263

Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency
p.267

Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.271

Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding
p.275

Long Carrier Lifetimes in n-Type 4H-SiC Epilayers
p.279

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Local Thermal Expansion and the C-C Stretch...

Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC

Abstract:

The C-C stretch vibration associated with the dicarbon antisite in 4H SiC has been observed out to the fifth harmonic in the low temperature photoluminescence spectrum. The anharmonicity is accounted for reasonably well by fits to the data based on the Morse potential. We combine the observations from experiment, the analytically tractable Morse potential, and results obtained from first principles calculations on this defect to obtain an estimate of the thermal expansion coefficient of the C-C bond. This local thermal expansion coefficient is considerably smaller than the linear thermal expansion coefficient of bulk 4H SiC, in striking contrast with the recent result for the nitrogen-vacancy center in diamond that the local thermal expansion coefficient is larger than the bulk value.