Paper Titles

Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
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Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC
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High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves
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Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC
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First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
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Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC
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Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
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Thin PSG Process for 4H-SiC MOSFET
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Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780First Principles Investigation of Divacancy in SiC...

First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application

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Abstract:

We calculated the hyperfine structure and the zero-field splitting parameters of divacancies in 3C, 4H and 6H SiC in the ground state and in the excited state for 4H SiC within the framework of density functional theory. Besides that our calculations provide identification of the defect in different polytypes, we can find some carbon atoms next to the divacancy that of the spin polarizations are similar in the ground and excited states. This coherent nuclear spin polarization phenomenon can be the base to utilize ¹³C spins as quantum memory.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

499-502

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.499

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Online since:

February 2014

Authors:

Krisztian Szasz, Viktor Ivády, Erik Janzén, Ádám Gali*

Keywords:

Hyperfine Coupling, Optically Detected Magnetic Resonance, Photoluminescence (PL), Solid State Quantum Bit, Zero-Field Splitting

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