4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water

Ai Isohashi; Yasuhisa Sano; Shun Sadakuni; Kazuto Yamauchi

doi:10.4028/www.scientific.net/MSF.778-780.722

Paper Titles

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC
p.706

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes
p.710

Junction Formation via Direct Bonding of Si and 6H-SiC
p.714

I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures
p.718

4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water
p.722

Investigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching Process
p.726

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures
p.730

Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas
p.734

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas
p.738

HomeMaterials Science ForumMaterials Science Forum Vols. 778-7804H-SiC Planarization Using Catalyst-Referred...

4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water

Abstract:

A novel abrasive-free polishing method called catalyst-referred etching (CARE) has been developed. CARE can be used to chemically planarize a silicon carbide (SiC) surface with an etching agent activated by a catalyst. Platinum (Pt) and hydrofluoric (HF) acid are used as the catalyst and etchant, respectively. CARE can produce an atomically flat and crystallographically highly ordered surface of 4HSiC (0001) with a root-mean-square roughness of less than 0.1 nm regardless of the cut-off angle. However, industrial use of CARE is difficult because of HF acid usage. In this study, pure water was investigated as an alternative etchant to HF acid. We examined CARE using pure water by applying it to the planarization of a 4HSiC substrate and observed a feasible performance. The removal mechanism is considered to be the dissociative adsorption of water molecules to the SiC bonds of the topmost Si atom, namely the hydrolysis of the back bond, and the catalysis of Pt is considered to enhance the reaction. CARE with pure water is expected to represent a breakthrough method for surface processing of SiC, and will be widely applied in industrial processes such as planarization after high temperature processing in device fabrication.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2013

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

722-725

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.722

Citation:

Cite this paper

Online since:

February 2014

Authors:

Ai Isohashi*, Yasuhisa Sano, Shun Sadakuni, Kazuto Yamauchi

Keywords:

Catalyst, Etching, Hydrofluoric Acid, Platinum, Polishing, Pure Water, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] H. Hara, Y. Sano, H. Mimura, K. Arima, A. Kubota, K. Yagi, J. Murata, and K. Yamauchi, J. Electron. Mater., 35 (2006), L11 (2006).

Google Scholar

[2] K. Arima, H. Hara, J. Murata, T. Ishida, R. Okamoto, K. Yagi, Y. Sano, H. Mimura, and K. Yamauchi, Appl. Phys. Lett., 90 (2007), 202106 (2007).

DOI: 10.1063/1.2739084

Google Scholar

[3] T. Okamoto, Y. Sano, H. Hara, T. Hatayama, K. Arima, K. Yagi, J. Murata, S. Sadakuni, K. Tachibana, Y. Shirasawa, H. Mimura, T. Fuyuki, and K. Yamauchi, Mater. Sci. Forum (2010), 645-–648, 775-–778 (2010).

DOI: 10.4028/www.scientific.net/msf.645-648.775

Google Scholar

[4] T. Okamoto, Y. Sano, K. Tachibana, K. Arima, A. Hattori, K. Yagi, J. Murata, S. Sadakuni, and K. Yamauchi, J. Nanosci. and Nanotechnol., 11 (2011), 2928 (2011).

DOI: 10.1166/jnn.2011.3917

Google Scholar

[5] H. Hara, Y. Sano, H. Mimura, K. Arima, A. Kubota, K. Yagi, J. Murata, and K. Yamauchi, Mater. Sci. Forum (2007), 556–557, 749–751. {4. 4 [JP] 参考文献リストに必要な情報が欠落しています}.

DOI: 10.4028/www.scientific.net/msf.556-557.749

Google Scholar

[6] T. Okamoto, Y. Sano, K. Tachibana, P. V. Bui, K. Arima, K. Inagaki, K. Yagi, J. Murata, S. Sadakuni, A. Isohashi, and K. Yamauchi, Jpn. J. Appl. Phys., 51 (2012), 046501-–4 (2012).

DOI: 10.7567/jjap.51.046501

Google Scholar

[7] A. Isohashi, Y. Sano, T. Okamoto, K. Tachibana, K. Arima, K. Inagaki, K. Yagi, S. Sadakuni, Y. Morikawa, and K. Yamauchi, Mater. Sci. Forum (2013), 740-–742, (2013) 847-–850.

DOI: 10.4028/www.scientific.net/msf.740-742.847

Google Scholar

[8] K. Inagaki, P. V. Bui, K. Yamauchi, and Y. Morikawa, Mater. Sci. Forum (2012), 717-–720, 581-–584 (2012).

Google Scholar