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Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking

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Abstract:

Effects of ICP power and pressure on microtrenching, striation, roughness and sidewall angles in SF6 based ICP-RIE etching of SiC have been studied. The results show that ICP RIE etching parameters such as ICP power and pressure can effect both striation and microtrenches and these challenges could be eliminated by optimizing etching parameters.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

533-536

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.533

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Online since:

June 2015

Authors:

Z. Mohammadi*, Vishal Ajit Shah, Michael R. Jennings, Craig A. Fisher, Philip Andrew Mawby

Keywords:

ICP RIE Etching, Microtrench, Roughness, Sidewall Angle, Striation, Trench, Trench MOSFET

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] Nakamura, T.; Nakano, Y.; Aketa, M.; Nakamura, R.; Mitani, S.; Sakairi, H.; Yokotsuji, Y., High performance SiC trench devices with ultra-low ron, Electron Devices Meeting (IEDM), 2011 IEEE International , vol., no., p.26. 5. 1, 26. 5. 3, 5-7 Dec. (2011).

DOI: 10.1109/iedm.2011.6131619

Google Scholar

[2] Lei Lin, Jian H. Zhao, Simulation and experimental study of 3-step junction termination extension for high-voltage 4H-SiC gate turn-off thyristors, Solid-State Electronics, Volume 86, August 2013, Pages 36-40, ISSN 0038-1101.

DOI: 10.1016/j.sse.2013.04.029

Google Scholar

[3] S. Van Nguyen, D. Dobuzinski, S.R. Stiffler, G. Chrisman; J. Electrochem. Soc. 138, p.1112, (1991).

Google Scholar

[4] D. Ruixue, Y. Yintang, and H. Ru, Microtrenching effect of SiC ICP etching in SF6/O2 plasma, Journal of Semiconductors, Vol., no 30, pp/400-404 Issue 1, Nov. (2008).

DOI: 10.1088/1674-4926/30/1/016001

Google Scholar