Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking

Z. Mohammadi; Vishal Ajit Shah; Michael R. Jennings; Craig A. Fisher; Phillip Andrew Mawby

doi:10.4028/www.scientific.net/MSF.821-823.533

Paper Titles

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors
p.516

Comparison of Different Novel Chip Separation Methods for 4H-SiC
p.520

High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser
p.524

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
p.528

Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
p.533

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
p.537

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541

Effect of Surface Damage on SiC Wafer Shape
p.545

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
p.549

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Elimination of Microtrenching in Trenches in...

Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking

Abstract:

Effects of ICP power and pressure on microtrenching, striation, roughness and sidewall angles in SF₆based ICP-RIE etching of SiC have been studied. The results show that ICP RIE etching parameters such as ICP power and pressure can effect both striation and microtrenches and these challenges could be eliminated by optimizing etching parameters.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

533-536

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.533

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Online since:

June 2015

Authors:

Z. Mohammadi*, Vishal Ajit Shah, Michael R. Jennings, Craig A. Fisher, Phillip Andrew Mawby

Keywords:

ICP RIE Etching, Microtrench, Roughness, Sidewall Angle, Striation, Trench, Trench MOSFET

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* - Corresponding Author

References

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