Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging

Yeganeh Bonyadi; Peter Michael Gammon; Roozbeh Bonyadi; Vishal A. Shah; C.A. Fisher; David M. Martin; Phillip Andrew Mawby

doi:10.4028/www.scientific.net/MSF.858.405

Paper Titles

Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors
p.389

Dislocation Characterization in 4H-SiC Crystals
p.393

Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC
p.397

Characterization of Threading Screw Dislocations of Burgers Vectors with A-Components in 4H-SiC
p.401

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
p.405

Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence
p.410

Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment
p.414

Ion Implantation Defects in 4H-SiC DIMOSFET
p.418

An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
p.422

HomeMaterials Science ForumMaterials Science Forum Vol. 858Characterization of 4H-SiC PiN Diodes Formed on...

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging

Abstract:

In this paper the results of a study in which the surface quality of 30, 35 and 110 µm 4H-SiC epitaxial layers from different manufacturers are evaluated using AFM and photoluminescence (PL) imaging. PiN diodes are then intentionally fabricated on triangular defects and polytypes grains which are formed, in order to understand their impact on the resulting electrical characteristics, which includes on-state behaviour, turn-on characteristics and reverse leakage current behaviour. The results indicate that the defects form a high resistance short through the p-type anode. This results in higher leakage current, well over 10⁸ times higher than the devices formed off-defect. PiN diodes fabricated on-defect also suffered from soft breakdown unlike those off-defect.