High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
p.651
p.651
Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
p.655
p.655
X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
p.659
p.659
Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
p.663
p.663
Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si
p.667
p.667
High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation
p.671
p.671
Alkali Metal Re-Distribution after Oxidation of 4H-SiC
p.677
p.677
Flatband Voltage Shift Depending on SiO2/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO2 Stacked Gate Dielectrics
p.681
p.681
Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
p.685
p.685
Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si
Abstract:
In this work we studied the gate oxidation temperature and nitridation influences on the resultant 3C-SiC MOSFET forward characteristics. Conventional long channel lateral MOSFETs were fabricated on 3C-SiC(100) epilayers grown on Si substrates using five different oxidation process. Both room temperature and high temperature (up to 500K) forward IV performance were characterised, and channel mobility as high as 90cm2/V.s was obtained for devices with nitrided gate oxide, considerable higher than the ones without nitridation process (~70 cm2/V.s).
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Info:
Periodical:
Materials Science Forum (Volume 858)
Pages:
667-670
Citation:
Online since:
May 2016
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