Impact of Hydrogenation on Electrical Properties of NiSi₂ Precipitates in Silicon

Abstract:

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

• Periodical: Solid State Phenomena (Volumes 108-109)
• Pages: 279-284
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.108-109.279
• Online since: December 2005
• Authors: O.F. Vyvenko, N.V. Bazlov, M.V. Trushin, A.A. Nadolinski, Michael Seibt, Wolfgang Schröter, George T. Hahn
• Keywords: DLTS, Hydrogenation, Nickel Silicide, Precipitation, Silicon

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