Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

Marko Yli-Koski; Hele Savin; E. Saarnilehto; Antti Haarahiltunen; Juha Sinkkonen; G. Berenyi; T. Pavelka

doi:10.4028/www.scientific.net/SSP.108-109.643

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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Measurement of Copper in p-Type Silicon Using...

Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

Abstract:

We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

643-648

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.643

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Cite this paper

Online since:

December 2005

Authors:

Marko Yli-Koski, Hele Savin, E. Saarnilehto, Antti Haarahiltunen, Juha Sinkkonen, G. Berenyi, T. Pavelka

Keywords:

Copper (Cu), Silicon, Surface Photo Voltage (SPV), Μ-Pcd

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