XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source
p.226
p.226
Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface
p.233
p.233
Analysis of Contaminated Oxide-Silicon Interfaces
p.243
p.243
Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films
p.249
p.249
Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
p.253
p.253
Stress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface Properties
p.259
p.259
Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties
p.263
p.263
Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements
p.267
p.267
Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon
p.275
p.275
Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
Abstract:
Structures of Si(001) hydrofillic bonded wafers have been studied by transmission electron microscopy. Model of three-fold nods generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.
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Info:
Periodical:
Solid State Phenomena (Volumes 178-179)
Pages:
253-258
Citation:
Online since:
August 2011
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