Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process

Simone Capecchi; Tanya Atanasova; Reiner Willeke; Michael Parthenopoulos; Christian Pizzetti; Jerome Daviot

doi:10.4028/www.scientific.net/SSP.255.291

Paper Titles

Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth
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Post CMP Wet Cleaning Influence on Cu Hillocks
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Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond
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Silica Formation during Etching of Silicon Nitride in Phosphoric Acid
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Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process
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Electrical Characterization of As-Processed Semiconductor Surfaces - Invited Paper
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Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler
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Specification of Trace Metal Contamination for Image Sensors
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Metal Removal Efficiency in High Aspect Ratio Structures
p.313

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Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process

Abstract:

This paper demonstrates how a low undercut Ti etchant developed by Technic France can be successfully introduced in a high volume manufacturing Fab for etching the under bump metallization (UBM). The Ti etchant has been tested on 300mm wafer production equipment in GLOBALFOUNDRIES. The Ti etchant evaluation has been carried out in collaboration with the Fraunhofer IZM-ASSID institute.