TEM In Situ Investigations of Interfacial Processes in the Pd/a-GeSi System
p.571
p.571
Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si1-xGex-Heterostructures
p.577
p.577
Raman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs Superlattices
p.583
p.583
Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si
p.589
p.589
Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes
p.595
p.595
Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements
p.601
p.601
Investigation of Recombination Properties of Ti Double Donor in Si
p.609
p.609
Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems
p.615
p.615
The Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations
p.619
p.619
Investigation of Recombination Properties of Ti Double Donor in Si
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volumes 32-33)
Pages:
609-614
Citation:
Online since:
December 1993
Authors:
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