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Infrared Vibrational Bands Related to Thermal Donors in Germanium
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Gettering of Unintentionally Contaminated Silicon...

Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing

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Abstract:

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

291-296

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.291

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Online since:

August 1999

Authors:

Marko Yli-Koski, J. Mellin, V. Ovchinnikov

Keywords:

Gettering, Phosphorous Ion Implantation, Silicon, Surface Photo Voltage (SPV)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved