Paper Titles

On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates
p.193

Si_xC_y Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties
p.197

Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations
p.205

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
p.211

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies
p.217

Mn Implantation for New Applications of 4H-SiC
p.221

Diffusion and Gettering of Transition Metals in 4H-SiC
p.225

Chlorine in SiC: Experiment and Theory
p.229

Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide
p.233

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Identification of Niobium in 4H-SiC by EPR and Ab...

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies

Article Preview

Abstract:

In unintentionally Nb-doped 4H-SiC grown by high-temperature chemical vapor deposition (HTCVD), an electron paramagnetic resonance (EPR) center with C_1h symmetry and an electron spin S=1/2 was observed. The spectrum shows a hyperfine structure consisting of ten equal-intensity hyperfine (hf) lines which is identified as due to the hf interaction between the electron spin and the nuclear spin of ⁹³Nb. An additional hf structure due to the interaction with two equivalent Si neighbors was also observed. Ab initio supercell calculations of Nb in 4H-SiC suggest that Nb may form complex with a C-vacancy (V_C) resulting in an asymmetric split-vacancy (ASV) defect, Nb_Si-V_C. Combining results from EPR and supercell calculations, we assign the observed Nb-related EPR center to the hexagonal-hexagonal configuration of the AVS defect in the neutral charge state, (Nb_Si-V_C)⁰.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

217-220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.217

Citation:

Cite this paper

Online since:

May 2012

Authors:

Nguyen Tien Son, Viktor Ivády, Adam Gali, Andreas Gällström, Stefano Leone, Olof Kordina, Erik Janzén

Keywords:

Ab Initio Calculation, Electron Paramagnetic Resonance (EPR), Split-Vacancy Defect, Transition Metal Impurities

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

[1] M. S. Miao and W. R. L. Lambrecht, Phys. Rev. B 74 (2006) 235218.

[2] W. J. Choyke and L. Patrick, Silicon Carbide l973 (University of South Carolina Press, Columbia, 1974), p.261.

[3] A. W. C. Van Kemenade and S. H. Hagen, Solid State Commun. 14 (1974) 1331.

[4] K. M. Lee, Le Si Dang, G. D. Watkins, and W. J. Choyke, Phys. Rev. B 32 (1985) 2273.

[5] J. Schneider, A. Dörnen, S. Leibenzeder, and R. Stein, Appl. Phys. Lett. 56 (1990) 1184.

[6] J. Baur, M. Kunzer, and J. Schneider, Phys. Stat. Sol. (a) 162 (1997) 153.

[7] P. G. Baranov, V. A. Khramtsov, and E. N. Mokhov, Semicond. Sci. Technol. 9 (1994) 1340.

[8] N. T. Son, A. Ellison, B. Magnusson, M. F. MacMillan, W. M. Chen, B. Monemar, and E. Janzén, J. Appl. Phys. 86 (1999) 4348.

[9] J. Baur, M. Kunzer, K. F. Dombrowski, U. Kaufmann, J. Schneider, P.G. Baranov, and E. N. Mokhov, Inst. Phys. Conf. Ser. 155 (1997) 933.

[10] K. Irmscher, I. Pintilie, L. Pintilie, D. Schulz, Physica B 308-310 (2001) 730.

DOI: 10.1016/s0921-4526(01)00887-0

[11] L. V. C. Assali, W. V. M. Machado, and J. F. Justo, Appl. Phys. Lett. 89 (2006) 072102.

[12] S. Decoster, S. Cottenier, B. De Vries, H. Emmerich, U. Wahl, J. G. Correia, and A. Vantomme, Phys. Rev. Lett. 102 (2009) 065502.

DOI: 10.1103/physrevlett.102.065502

[13] N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, and E. Janzén, Mater. Sci. Forum 457-460 (2004) 437.

DOI: 10.4028/www.scientific.net/msf.457-460.437

[14] G. Kresse and J. Furthmüller, Phys. Rev. B 54 (1996) 11169.

[15] P. E. Blöchl, Phys. Rev. B 50 (1994) 17953.

[16] J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77 (1996) 3865.

[17] J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 118 (2003) 8207.

[18] A. V. Krukau, O. A. Vydrov, A. F. Izmaylov, and G. E. Scuseria, J. Chem. Phys. 125 (2006) 224106.

[19] M. Marsman, J. Paier, A. Stroppa, and G. Kresse, J. Phys.: Condens. Matter 20 (2008) 064201.

DOI: 10.1088/0953-8984/20/6/064201

[20] P. Deák, B. Aradi, T. Frauenheim, E. Janzén, and A. Gali, Phys. Rev. B 81 (2010) 153203.